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| Citation key | Ulrich1996 |
|---|---|
| Author | Ulrich, C. and Mroginski, M. A. and Goni, A. R. and Cantarero, A. and Schwarz, U. and Munoz, V. and Syassen, K. |
| Pages | 121–127 |
| Year | 1996 |
| Journal | Physica Status Solidi B-Basic Research |
| Volume | 198 |
| Number | 1 |
| Abstract | The pressure dependence of the phonon modes in the layered semiconductor gamma-InSe has been investigated experimentally and theoretically for pressures up to II GPa. The mode Gruneisen parameters of all Raman-active zone-center phonons have been determined by Raman scattering under pressure. In addition, features corresponding to second and third-order scattering processes are apparent in the Raman spectra under resonance conditions, from which information about zone-edge modes can be obtained. For the assignment of the observed Raman features to vibrational modes we have calculated the phonon dispersion curves using a rigid-ion model including couplings to first-nearest neighbors and long-range Coulomb interaction. At about 7 GPa the sample turns from transparent to opaque and a new Raman mode appears in the spectra at around 165 cm(-1). This is evidence of a pressure-induced structural instability of gamma-InSe, which is optically detected but not by X-ray diffraction. |
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